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| inchange semiconductor product specification silicon npn power transistors 2SC2527 description ? ? with to-220c package ? complement to type 2sa1077 ? fast switching speed ? excellent safe operating area applications ? high frequency power amplifiers ? audio power amplifiers ? switching regulators ? dc-dc converters pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a p c collector power dissipation t c =25 ?? 60 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC2527 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ; r be = ?t 120 v v (br)cbo collector-base breakdown voltage i c =50 | a ; i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =50 | a ; i c =0 7 v v cesat collector-emitter saturation voltage i c =5a; i b =0.5a 1.8 v v be base-emitter on voltage i c =5 a ; v ce =5v 1.7 v i cbo collector cut-off current v cb =120v ;i e =0 50 | a i ceo collector cut-off current v ce =120v; i b =0 1 ma i ebo emitter cut-off current v eb =7v ;i c =0 50 | a h fe-1 dc current gain i c =1 a ; v ce =5v 60 200 h fe -2 dc current gain i c =5 a ; v ce =5v 40 f t transition frequency i c =1 a ; v ce =10v 80 mhz c ob output capacitance i e =0 ; v cb =10v; f=1mhz 180 pf switching times t r rise time 0.3 | s t s storage time 1.3 | s t f fall time i c =7.5 a; r l =4 |? i b1 =-i b2 =0.75a 0.2 | s inchange semiconductor product specification 3 silicon npn power transistors 2SC2527 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) |
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